Справочник MOSFET. 7N60L-TQ2-R

 

7N60L-TQ2-R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 7N60L-TQ2-R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 142 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 180 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для 7N60L-TQ2-R

   - подбор ⓘ MOSFET транзистора по параметрам

 

7N60L-TQ2-R Datasheet (PDF)

 ..1. Size:349K  utc
 7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf pdf_icon

7N60L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 7.1. Size:349K  utc
 7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf pdf_icon

7N60L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 9.1. Size:187K  utc
 7n60l.pdf pdf_icon

7N60L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

Другие MOSFET... 7N60L-TF2-T , 7N60G-TF2-T , 7N60L-TF3T-T , 7N60G-TF3T-T , 7N60L-T2Q-T , 7N60G-T2Q-T , 7N60L-TQ2-T , 7N60G-TQ2-T , IRFZ46N , 7N60G-TQ2-R , 7N65KL-TA3-T , 7N65KG-TA3-T , 7N65KL-TF3-T , 7N65KG-TF3-T , 7N65KL-TF1-T , 7N65KG-TF1-T , 7N65KL-TF2-T .

History: CEP85N75 | IXFC14N80P | PSMN0R9-30YLD | HM60N03D | FTK2102 | SSM6P36FE

 

 
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