7N65KG-T2Q-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 7N65KG-T2Q-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22.5 nC
trⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 88 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
Тип корпуса: TO262
Аналог (замена) для 7N65KG-T2Q-T
7N65KG-T2Q-T Datasheet (PDF)
7n65kl-tf3t-t 7n65kg-tf3t-t 7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kl-t2q-t 7n65kg-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of
7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kg-tf2-t 7n65kl-tf3t-t 7n65kg-tf3t-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s
7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t 7n65kg-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of
7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s
7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tq2-t 7n65kg-tq2-t 7n65kl-tq2-r 7n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPD180N10N3G
History: IPD180N10N3G
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918