FDG8842CZ - описание и поиск аналогов

April 2007 FDG8842CZ tm Complementary PowerTrench MOSFET Q1 30V,0.75A,0.4 ; Q2 25V, 0.41A,1.1 Features General Description These N & P-Channel logic level enhancement mode field effect Q1 N-Channel transistors are produced using Fairchild s proprietary, high cell Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75A density, DMOS technology. This very high density process is

FDG8842CZ Complementary PowerTrench MOSFET Q1 30V,0.75A,0.4 ; Q2 25V, 0.41A,1.1 Features General Description Q1 N-Channel These N & P-Channel logic level enhancement mode field Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75A effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very Max rDS(on) = 0.5 at VGS =

April 2007 FDG8850NZ tm Dual N-Channel PowerTrench MOSFET 30V,0.75A,0.4 Features General Description This dual N-Channel logic level enhancement mode field effect Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75A transistors are produced using Fairchild s proprietary, high cell Max rDS(on) = 0.5 at VGS = 2.7V, ID = 0.67A density, DMOS technology. This very high density proces

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur