Справочник MOSFET. 8N60G-TF2-T

 

8N60G-TF2-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 8N60G-TF2-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для 8N60G-TF2-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

8N60G-TF2-T Datasheet (PDF)

 ..1. Size:238K  utc
8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdfpdf_icon

8N60G-TF2-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 9.1. Size:815K  ncepower
nceap018n60gu.pdfpdf_icon

8N60G-TF2-T

NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E

 9.2. Size:1124K  ncepower
ncep018n60gu.pdfpdf_icon

8N60G-TF2-T

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

Другие MOSFET... 8N60KG-TF3-T , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T , 8N60G-TA3-T , 8N60L-TF1-T , 8N60G-TF1-T , 8N60L-TF2-T , STF13NM60N , 8N60L-TF3-T , 8N60G-TF3-T , 8N60L-T2Q-T , 8N60G-T2Q-T , 8N65KL-TA3-T , 8N65KG-TA3-T , 8N65KL-TF3-T , 8N65KG-TF3-T .

History: RQA0009SXAQS | 2SK1807

 

 
Back to Top

 


 
.