8N60L-T2Q-T. Аналоги и основные параметры

Наименование производителя: 8N60L-T2Q-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 147 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60.5 ns

Cossⓘ - Выходная емкость: 105 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO262

Аналог (замена) для 8N60L-T2Q-T

- подборⓘ MOSFET транзистора по параметрам

 

8N60L-T2Q-T даташит

 ..1. Size:238K  utc
 8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdf pdf_icon

8N60L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 9.1. Size:167K  international rectifier
 irfps38n60l.pdf pdf_icon

8N60L-T2Q-T

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 9.2. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf pdf_icon

8N60L-T2Q-T

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.3. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf pdf_icon

8N60L-T2Q-T

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 8N60L-TA3-T, 8N60G-TA3-T, 8N60L-TF1-T, 8N60G-TF1-T, 8N60L-TF2-T, 8N60G-TF2-T, 8N60L-TF3-T, 8N60G-TF3-T, 10N65, 8N60G-T2Q-T, 8N65KL-TA3-T, 8N65KG-TA3-T, 8N65KL-TF3-T, 8N65KG-TF3-T, 8N65KL-TF1-T, 8N65KG-TF1-T, 8N65KL-TF2-T