8N60G-T2Q-T - описание и поиск аналогов

 

8N60G-T2Q-T - Аналоги. Основные параметры


   Наименование производителя: 8N60G-T2Q-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для 8N60G-T2Q-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

8N60G-T2Q-T технические параметры

 ..1. Size:238K  utc
 8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdf pdf_icon

8N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 9.1. Size:815K  ncepower
 nceap018n60gu.pdf pdf_icon

8N60G-T2Q-T

NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E

 9.2. Size:1124K  ncepower
 ncep018n60gu.pdf pdf_icon

8N60G-T2Q-T

NCEP018N60GU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60GU uses Super Trench II technology that is V =60V,I =195A DS D uniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

Другие MOSFET... 8N60G-TA3-T , 8N60L-TF1-T , 8N60G-TF1-T , 8N60L-TF2-T , 8N60G-TF2-T , 8N60L-TF3-T , 8N60G-TF3-T , 8N60L-T2Q-T , 5N60 , 8N65KL-TA3-T , 8N65KG-TA3-T , 8N65KL-TF3-T , 8N65KG-TF3-T , 8N65KL-TF1-T , 8N65KG-TF1-T , 8N65KL-TF2-T , 8N65KG-TF2-T .

 

 
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