Справочник MOSFET. STS3429

 

STS3429 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STS3429
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Qgⓘ - Общий заряд затвора: 5 nC
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для STS3429

 

 

STS3429 Datasheet (PDF)

 ..1. Size:103K  samhop
sts3429.pdf

STS3429
STS3429

GreenProductSTS3429aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=-10VSuface Mount Package.-30V -3.2A105 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

 8.1. Size:121K  samhop
sts3426.pdf

STS3429
STS3429

GreenProductSTS3426aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.31 @ VGS= 10VSuface Mount Package.30V 4.2A 40 @ VGS= 4.5V52 @ VGS= 2.5V SOT 26 DTop ViewD 1 6 DGD 2 5 DG 3 4 SSABSOLUTE MAXIMUM RA

 8.2. Size:107K  samhop
sts3420.pdf

STS3429
STS3429

GreenProductSTS3420aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS= 10VSuface Mount Package.30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V DSOT23DGSGS) ABSOLUTE MAXIMUM RATINGS (TA=25C unless o

 9.1. Size:168K  samhop
sts3414.pdf

STS3429
STS3429

GreenProductSTS3414aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.50 @ VGS=10V30V 4A 60 @ VGS=4.5V SOT-23 package.75 @ VGS=2.5VDS OT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol

 9.2. Size:111K  samhop
sts3405.pdf

STS3429
STS3429

GreenProductSTS3405aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100 @ VGS=-10VSOT-23 package.-30V -3A150 @ VGS=-4.5VDSOT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramete

 9.3. Size:170K  samhop
sts3404.pdf

STS3429
STS3429

GreenProductSTS3404aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.54 @ VGS= 10VSuface Mount Package.30V 4A76 @ VGS= 4.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

 9.4. Size:88K  samhop
sts3417.pdf

STS3429
STS3429

GrPPrPPSTS3417aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.96 @ VGS=-4.5VSuface Mount Package.100 @ VGS=-4.0V-30V -3A 103 @ VGS=-3.7VESD Protected.111 @ VGS=-3.1V123 @ VGS=-2.5VDSOT-23GDS

 9.5. Size:95K  samhop
sts3409l.pdf

STS3429
STS3429

rerrPPrPrProSTS3409LaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.75 @ VGS=-10VSuface Mount Package.-20V -3.2A 95 @ VGS=-4.5V137 @ VGS=-2.5VDSOT-23GDSGS(TA=25C unless otherwise noted)

 9.6. Size:109K  samhop
sts3419.pdf

STS3429
STS3429

GreenProductSTS3419aS mHop Microelectronics C orp.Ver 2.2P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.65 @ VGS=-10VSuface Mount Package.-30V -3.8A90 @ VGS=-4.5V Halogen free.DSOT-23DGSGSABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

 9.7. Size:100K  samhop
sts3406.pdf

STS3429
STS3429

GreenProductSTS3406aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.174 @ VGS=10VSuface Mount Package.30V 2A 218 @ VGS=4.5VESD Protected.311 @ VGS=2.5VDSOT23GDSGS(TA=25C unless otherwise noted)

 9.8. Size:95K  samhop
sts3401a.pdf

STS3429
STS3429

GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI

 9.9. Size:94K  samhop
sts3415.pdf

STS3429
STS3429

GrPPrPPSTS3415aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.46 @ VGS=-4.5VSuface Mount Package.47 @ VGS=-4.0VESD Protected.49 @ VGS=-3.7V-20V -4.2A54 @ VGS=-3.1V61 @ VGS=-2.5VDSOT-23GDSG

 9.10. Size:132K  samhop
sts3402.pdf

STS3429
STS3429

GreenProductS TS 3402S amHop Microelectronics C orp.AUG .18 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.30@ VG S = 10V30V 4.6AS OT-23 package.42@ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw

 9.11. Size:107K  samhop
sts3411a.pdf

STS3429
STS3429

GreenProductSTS3411AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.52 @ VGS=-10VSuface Mount Package.-30V -3.6A65 @ VGS=-4.5V ESD Protected.D SOT-23GDSGSABSOLUTE MAXIMUM RATINGS (TA=25C unless

 9.12. Size:111K  samhop
sts3400.pdf

STS3429
STS3429

S TS 3400S amHop Microelectronics C orp.S ep.21 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V30V 3.5AS OT-23 package.70 @ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Li

 9.13. Size:100K  samhop
sts3409.pdf

STS3429
STS3429

GrPPrPPSTS3409aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.169 @ VGS=-10VSuface Mount Package.-30V -2.2A293 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATING

 9.14. Size:132K  samhop
sts3401.pdf

STS3429
STS3429

GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

 9.15. Size:920K  cn vbsemi
sts3415.pdf

STS3429
STS3429

STS3415www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

Другие MOSFET... STS400 , FDG6332C , STS3623 , FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , IRF9640 , STS3426 , FDG8850NZ , FDH038AN08A1 , FDH047AN08A0 , FDH055N15A , FDH3632 , STS3411A , FDH44N50 .

 

 
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