Справочник MOSFET. UF640G-TF2-T

 

UF640G-TF2-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UF640G-TF2-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

UF640G-TF2-T Datasheet (PDF)

 ..1. Size:269K  utc
 uf640g-aa3-r uf640l-ta3-t uf640g-ta3-t uf640l-tf1-t uf640g-tf1-t uf640l-tf2-t uf640g-tf2-t uf640l-tf3-t uf640g-tf3-t.pdf pdf_icon

UF640G-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 6.1. Size:269K  utc
 uf640l-tn3-r uf640g-tn3-r uf640l-t2q-t uf640g-t2q-t uf640l-t2q-r uf640g-t2q-r uf640l-tq2-t uf640g-tq2-t uf640l-tq2-r uf640g-tq2-r.pdf pdf_icon

UF640G-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 9.1. Size:244K  utc
 uf640.pdf pdf_icon

UF640G-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

 9.2. Size:368K  cet
 ceuf640 cedf640.pdf pdf_icon

UF640G-TF2-T

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

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History: IXTH50N30 | WMJ38N60C2 | 4N65L-TN3-R | TPC8052-H | AO6804A | SI5429DU | F5V50

 

 
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