UF640L-TQ2-R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UF640L-TQ2-R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 139 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 240 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO263
Аналог (замена) для UF640L-TQ2-R
UF640L-TQ2-R Datasheet (PDF)
uf640l-tn3-r uf640g-tn3-r uf640l-t2q-t uf640g-t2q-t uf640l-t2q-r uf640g-t2q-r uf640l-tq2-t uf640g-tq2-t uf640l-tq2-r uf640g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
uf640g-aa3-r uf640l-ta3-t uf640g-ta3-t uf640l-tf1-t uf640g-tf1-t uf640l-tf2-t uf640g-tf2-t uf640l-tf3-t uf640g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
uf640.pdf

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an
ceuf640 cedf640.pdf

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth
Другие MOSFET... UF640L-TN3-R , UF640G-TN3-R , UF640L-T2Q-T , UF640G-T2Q-T , UF640L-T2Q-R , UF640G-T2Q-R , UF640L-TQ2-T , UF640G-TQ2-T , AON7506 , UF640G-TQ2-R , UF740L-TA3-T , UF740G-TA3-T , UF740L-TF1-T , UF740G-TF1-T , UF740L-TF2-T , UF740G-TF2-T , UF740L-TF3-T .
History: P0765JD | OSG60R108FZF | PHB96NQ03LT | 2N5398 | BSD235C | WFW13N50
History: P0765JD | OSG60R108FZF | PHB96NQ03LT | 2N5398 | BSD235C | WFW13N50



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