Справочник MOSFET. UF830KG-TF2-T

 

UF830KG-TF2-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UF830KG-TF2-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 48 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для UF830KG-TF2-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

UF830KG-TF2-T Datasheet (PDF)

 ..1. Size:251K  utc
 uf830kl-ta3-t uf830kg-ta3-t uf830kl-tf3-t uf830kg-tf3-t uf830kl-tf2-t uf830kg-tf2-t uf830kl-tn3-r uf830kg-tn3-r.pdf pdf_icon

UF830KG-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F FEATURES *

 9.1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf pdf_icon

UF830KG-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.2. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf pdf_icon

UF830KG-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.3. Size:274K  utc
 uf830z.pdf pdf_icon

UF830KG-TF2-T

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... UF740G-TQ2-T , UF740L-TQ2-R , UF740G-TQ2-R , UF830KL-TA3-T , UF830KG-TA3-T , UF830KL-TF3-T , UF830KG-TF3-T , UF830KL-TF2-T , 7N60 , UF830KL-TN3-R , UF830KG-TN3-R , UF830L-TA3-T , UF830G-TA3-T , UF830L-TF3-T , UF830G-TF3-T , UF830L-TF1-T , UF830G-TF1-T .

History: BSP322P

 

 
Back to Top

 


 
.