UF830G-TMS-T - аналоги и даташиты транзистора

 

UF830G-TMS-T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: UF830G-TMS-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO251S
 

 Аналог (замена) для UF830G-TMS-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

UF830G-TMS-T Datasheet (PDF)

 ..1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf pdf_icon

UF830G-TMS-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 5.1. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf pdf_icon

UF830G-TMS-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.1. Size:274K  utc
 uf830z.pdf pdf_icon

UF830G-TMS-T

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

 9.2. Size:284K  utc
 uf830.pdf pdf_icon

UF830G-TMS-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F1* 4.

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... UF830G-TF3-T , UF830L-TF1-T , UF830G-TF1-T , UF830L-TF2-T , UF830G-TF2-T , UF830L-TM3-T , UF830G-TM3-T , UF830L-TMS-T , IRF9640 , UF830L-TN3-R , UF830G-TN3-R , UF830L-T2Q-T , UF830G-T2Q-T , UF830L-TQ2-R , UF830G-TQ2-R , UF830L-TQ2-T , UF830G-TQ2-T .

History: HTS220C04 | AP65SL190AP | OSG65R580DT3F | IXTK102N65X2 | NP90N04NUK | RS1E240BN

 

 
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