UT100N03G-TM3-T. Аналоги и основные параметры

Наименование производителя: UT100N03G-TM3-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm

Тип корпуса: TO251

Аналог (замена) для UT100N03G-TM3-T

- подборⓘ MOSFET транзистора по параметрам

 

UT100N03G-TM3-T даташит

 0.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON)

 3.1. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON)

 6.1. Size:261K  utc
 ut100n03-q.pdf pdf_icon

UT100N03G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m @VGS=10 V * RDS(ON) = 8.0m @VGS=4.

 6.2. Size:268K  utc
 ut100n03.pdf pdf_icon

UT100N03G-TM3-T

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... UP9971L-D08-T, UP9971G-D08-T, UP9971G-S08-R, UT100N03L-TA3-T, UT100N03G-TA3-T, UT100N03L-TF3-T, UT100N03G-TF3-T, UT100N03L-TM3-T, IRF640N, UT100N03L-TN3-R, UT100N03G-TN3-R, UT100N03L-TND-R, UT100N03G-TND-R, UT100N03L-TQ2-T, UT100N03G-TQ2-T, UT100N03L-TQ2-R, UT100N03G-TQ2-R