Справочник MOSFET. UT100N03G-TN3-R

 

UT100N03G-TN3-R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UT100N03G-TN3-R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для UT100N03G-TN3-R

   - подбор ⓘ MOSFET транзистора по параметрам

 

UT100N03G-TN3-R Datasheet (PDF)

 0.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 2.1. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 6.1. Size:261K  utc
 ut100n03-q.pdf pdf_icon

UT100N03G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m@VGS=10 V * RDS(ON) = 8.0m@VGS=4.

 6.2. Size:268K  utc
 ut100n03.pdf pdf_icon

UT100N03G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 11TO-220 TO-251 DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with 1low gate voltages. This device is suitable for use as a load 1switch or in PWM applications. TO-252TO-263 FEATURES * RDS(ON)= 5.3m

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... UP9971G-S08-R , UT100N03L-TA3-T , UT100N03G-TA3-T , UT100N03L-TF3-T , UT100N03G-TF3-T , UT100N03L-TM3-T , UT100N03G-TM3-T , UT100N03L-TN3-R , IRF3710 , UT100N03L-TND-R , UT100N03G-TND-R , UT100N03L-TQ2-T , UT100N03G-TQ2-T , UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R .

History: UPA2814T1S | HAT2286C | SWP085R68E7T | CJX3139K | VBQA1402 | SWN7N65DA | NVMFS5H600NL

 

 
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