UT3400G-AE3-R. Аналоги и основные параметры
Наименование производителя: UT3400G-AE3-R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5.1 ns
Cossⓘ - Выходная емкость: 99 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: SOT23
Аналог (замена) для UT3400G-AE3-R
- подборⓘ MOSFET транзистора по параметрам
UT3400G-AE3-R даташит
ut3400l-ae2-r ut3400g-ae2-r ut3400l-ae3-r ut3400g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER 3 MOSFET 2 1 SOT-23 (EIAJ SC-59) DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing 3 the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. 2 The UTC UT3400 is optimized for applications, such as a lo
ut3400.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM. FEATURES * VDS (V)=30V
ut3404.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3403.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch
Другие IGBT... UT2316G-AE2-R, UT2316G-AE3-R, UT2955G-AA3-R, UT2955L-TN3-R, UT2955G-TN3-R, UT3400L-AE2-R, UT3400G-AE2-R, UT3400L-AE3-R, AON7410, UT3401G-AE3-R, UT3401ZL-AE3-R, UT3401ZG-AE3-R, UT3404G-AE3-R, UT3404G-S08-R, UT3N06G-AB3-R, UT3N06G-AE3-R, UT3N06L-TM3-T
History: NCE50NF600R
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent | 2sc1313












