UT3404G-S08-R. Аналоги и основные параметры
Наименование производителя: UT3404G-S08-R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 102 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: SOP8
Аналог (замена) для UT3404G-S08-R
- подборⓘ MOSFET транзистора по параметрам
UT3404G-S08-R даташит
ut3404g-ae3-r ut3404g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3404.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3404.pdf
UT3404 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1
ut3403.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch
Другие IGBT... UT3400L-AE2-R, UT3400G-AE2-R, UT3400L-AE3-R, UT3400G-AE3-R, UT3401G-AE3-R, UT3401ZL-AE3-R, UT3401ZG-AE3-R, UT3404G-AE3-R, AON6380, UT3N06G-AB3-R, UT3N06G-AE3-R, UT3N06L-TM3-T, UT3N06G-TM3-T, UT3N06L-TN3-R, UT3N06G-TN3-R, UT3N10L-AA3-R, UT3N10G-AA3-R
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