UT3404G-S08-R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UT3404G-S08-R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 13.88 nC
trⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 102 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: SOP8
- подбор MOSFET транзистора по параметрам
UT3404G-S08-R Datasheet (PDF)
ut3404g-ae3-r ut3404g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3404.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
ut3404.pdf

UT3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
ut3403.pdf

UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET -2.6 Amps, 30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: SWP630A1 | UTT100N06 | HUF75344A3 | SWP069R10VS | HUF76129P3 | SWSI6N70DA | UTP45N02
History: SWP630A1 | UTT100N06 | HUF75344A3 | SWP069R10VS | HUF76129P3 | SWSI6N70DA | UTP45N02



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