FDMA1029PZ - описание и поиск аналогов

May 2009 tmtm FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi

t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 3.7A, 72m Features General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2A and other ultra-portable applications. It features

May 2009 FDMA1027PT Dual P-Channel PowerTrench MOSFET 20 V, 3 A, 120 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 A for the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 A ultra-portable applications. It features tw

May 20 FDMA1025P tm Dual P-Channel PowerTrench MOSFET 20V, 3.1A, 155m Features General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3A portable applications. It feat

July 2014 FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 V independent P-Channel MOSFETs with low on-state

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