Справочник MOSFET. FDMA1029PZ

 

FDMA1029PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMA1029PZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: MICROFET

 Аналог (замена) для FDMA1029PZ

 

 

FDMA1029PZ Datasheet (PDF)

 ..1. Size:256K  fairchild semi
fdma1029pz.pdf

FDMA1029PZ
FDMA1029PZ

May 2009tmtmFDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

 ..2. Size:123K  onsemi
fdma1029pz.pdf

FDMA1029PZ
FDMA1029PZ

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi

 7.1. Size:321K  fairchild semi
fdma1028nz.pdf

FDMA1029PZ
FDMA1029PZ

tOctober 2010tmFDMA1028NZDual N-Channel PowerTrench MOSFETGeneral Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

 7.2. Size:402K  fairchild semi
fdma1024nz.pdf

FDMA1029PZ
FDMA1029PZ

May 2010FDMA1024NZDual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 mFeatures General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 AThis device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 Aultra-portable applications. It features two indepe

 7.3. Size:417K  fairchild semi
fdma1023pz.pdf

FDMA1029PZ
FDMA1029PZ

May 2009FDMA1023PZtmDual P-Channel PowerTrench MOSFET20V, 3.7A, 72mFeatures General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2Aand other ultra-portable applications. It features

 7.4. Size:379K  fairchild semi
fdma1027pt.pdf

FDMA1029PZ
FDMA1029PZ

May 2009FDMA1027PTDual P-Channel PowerTrench MOSFET20 V, 3 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 Afor the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 Aultra-portable applications. It features tw

 7.5. Size:339K  fairchild semi
fdma1025p.pdf

FDMA1029PZ
FDMA1029PZ

May 20 FDMA1025PtmDual P-Channel PowerTrench MOSFET 20V, 3.1A, 155mFeatures General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1AThis device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3Aportable applications. It feat

 7.6. Size:423K  fairchild semi
fdma1027p.pdf

FDMA1029PZ
FDMA1029PZ

July 2014FDMA1027PDual P-Channel PowerTrench MOSFET General Description FeaturesThis device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 Vindependent P-Channel MOSFETs with low on-state

 7.7. Size:500K  onsemi
fdma1025p.pdf

FDMA1029PZ
FDMA1029PZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ , IRFP260 , FDMA1032CZ , STS3404 , FDMA2002NZ , STS3402 , FDMA291P , FDMA3023PZ , FDMA3028N , STS3401A .

 

 
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