S70N08R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: S70N08R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 127 W
Предельно допустимое напряжение сток-исток |Uds|: 70 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3.6 V
Максимально допустимый постоянный ток стока |Id|: 90 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 92 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 410 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0072 Ohm
Тип корпуса: TO-220
S70N08R Datasheet (PDF)
s70n08r s70n08s s70n08rn s70n08rp.pdf
S70N08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=90A DC Motor Control Rds(on)(typ)=6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
s70n08r s70n08s s70n08rn s70n08rp.pdf
S70N08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=90A DC Motor Control Rds(on)(typ)=6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
brcs70n08ip.pdf
BRCS70N08IP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici
s70n08zr s70n08zs s70n08zrn s70n08zrp.pdf
S70N08ZR/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=80A DC Motor Control Rds(on)(typ)=6.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf
RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic
rf1s70n06.pdf
RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic
rfp70n03 rf1s70n03sm.pdf
RFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power FeaturesMOSFETs 70A, 30VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
ms70n03.pdf
MS70N03N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)6 @ VGS = 10V75 Low thermal impedance308 @ VGS = 4.5V65 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE
hrs70n06k.pdf
December 2014BVDSS = 60 VRDS(on) typ HRS70N06K ID = 80 A60V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 (Typ.) @VGS=10V 100% Avalanche Test
s70n06r s70n06s s70n06rn s70n06rp.pdf
S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
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