Справочник MOSFET. HM10N10KA

 

HM10N10KA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM10N10KA
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 40 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 10 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 21.5 nC
   Время нарастания (tr): 7.4 ns
   Выходная емкость (Cd): 37 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM10N10KA

 

 

HM10N10KA Datasheet (PDF)

 ..1. Size:598K  cn hmsemi
 hm10n10ka.pdf

HM10N10KA HM10N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

 6.1. Size:888K  cn vbsemi
 hm10n10k.pdf

HM10N10KA HM10N10KA

HM10N10Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 6.2. Size:565K  cn hmsemi
 hm10n10k.pdf

HM10N10KA HM10N10KA

HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 7.1. Size:697K  cn hmsemi
 hm10n10i.pdf

HM10N10KA HM10N10KA

HM10N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 7.2. Size:854K  cn hmsemi
 hm10n10q.pdf

HM10N10KA HM10N10KA

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =1 A RDS(ON)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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