STS3401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STS3401
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Общий заряд затвора (Qg): 7 nC
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: SOT23
STS3401 Datasheet (PDF)
sts3401.pdf
GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
sts3401a.pdf
GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI
sts3405.pdf
GreenProductSTS3405aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100 @ VGS=-10VSOT-23 package.-30V -3A150 @ VGS=-4.5VDSOT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramete
sts3404.pdf
GreenProductSTS3404aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.54 @ VGS= 10VSuface Mount Package.30V 4A76 @ VGS= 4.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
sts3409l.pdf
rerrPPrPrProSTS3409LaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.75 @ VGS=-10VSuface Mount Package.-20V -3.2A 95 @ VGS=-4.5V137 @ VGS=-2.5VDSOT-23GDSGS(TA=25C unless otherwise noted)
sts3406.pdf
GreenProductSTS3406aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.174 @ VGS=10VSuface Mount Package.30V 2A 218 @ VGS=4.5VESD Protected.311 @ VGS=2.5VDSOT23GDSGS(TA=25C unless otherwise noted)
sts3402.pdf
GreenProductS TS 3402S amHop Microelectronics C orp.AUG .18 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.30@ VG S = 10V30V 4.6AS OT-23 package.42@ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw
sts3400.pdf
S TS 3400S amHop Microelectronics C orp.S ep.21 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V30V 3.5AS OT-23 package.70 @ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Li
sts3409.pdf
GrPPrPPSTS3409aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.169 @ VGS=-10VSuface Mount Package.-30V -2.2A293 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATING
Другие MOSFET... STS3402 , FDMA291P , FDMA3023PZ , FDMA3028N , STS3401A , FDMA410NZ , FDMA420NZ , FDMA430NZ , IRF9540 , FDMA507PZ , FDMA510PZ , FDMA520PZ , FDMA530PZ , FDMA6023PZT , FDMA7630 , STS3400 , FDMA7632 .
