Справочник MOSFET. STS3401

 

STS3401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STS3401
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Qgⓘ - Общий заряд затвора: 7 nC
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для STS3401

 

 

STS3401 Datasheet (PDF)

 ..1. Size:132K  samhop
 sts3401.pdf

STS3401 STS3401

GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

 0.1. Size:95K  samhop
 sts3401a.pdf

STS3401 STS3401

GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI

 8.1. Size:111K  samhop
 sts3405.pdf

STS3401 STS3401

GreenProductSTS3405aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100 @ VGS=-10VSOT-23 package.-30V -3A150 @ VGS=-4.5VDSOT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramete

 8.2. Size:170K  samhop
 sts3404.pdf

STS3401 STS3401

GreenProductSTS3404aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.54 @ VGS= 10VSuface Mount Package.30V 4A76 @ VGS= 4.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

 8.3. Size:95K  samhop
 sts3409l.pdf

STS3401 STS3401

rerrPPrPrProSTS3409LaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.75 @ VGS=-10VSuface Mount Package.-20V -3.2A 95 @ VGS=-4.5V137 @ VGS=-2.5VDSOT-23GDSGS(TA=25C unless otherwise noted)

 8.4. Size:100K  samhop
 sts3406.pdf

STS3401 STS3401

GreenProductSTS3406aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.174 @ VGS=10VSuface Mount Package.30V 2A 218 @ VGS=4.5VESD Protected.311 @ VGS=2.5VDSOT23GDSGS(TA=25C unless otherwise noted)

 8.5. Size:132K  samhop
 sts3402.pdf

STS3401 STS3401

GreenProductS TS 3402S amHop Microelectronics C orp.AUG .18 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.30@ VG S = 10V30V 4.6AS OT-23 package.42@ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw

 8.6. Size:111K  samhop
 sts3400.pdf

STS3401 STS3401

S TS 3400S amHop Microelectronics C orp.S ep.21 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V30V 3.5AS OT-23 package.70 @ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Li

 8.7. Size:100K  samhop
 sts3409.pdf

STS3401 STS3401

GrPPrPPSTS3409aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.169 @ VGS=-10VSuface Mount Package.-30V -2.2A293 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATING

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