HM15N10K - описание и поиск аналогов

HM15N10K N-Channel Enhancement Mode Power MOSFET Description The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

HM15N10D N-Channel Enhancement Mode Power MOSFET Description The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =15A RDS(ON)

IGBT Features 1200V,15A VCE(sat)(typ.)=2.6V@VGE=15V IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms General Description IGBTs offer lower losses and higher energy efficiency H&M for application such as IH (induction heating),UPS, General inverter and other soft switching applications. Absolute

PHM15NQ20T TrenchMOS standard level FET Rev. 03 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Porta

HM15N50/HM15N50F HM15N50/HM15N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 15.0A, 500V, RDS(on) = 0.42 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to Fast s witching minimize o n-state r esistance, pr ovide superior switc

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =15A RDS(ON)