Справочник MOSFET. HM15N50F

 

HM15N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM15N50F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для HM15N50F

 

 

HM15N50F Datasheet (PDF)

 ..1. Size:500K  cn hmsemi
hm15n50 hm15n50f.pdf

HM15N50F
HM15N50F

HM15N50/HM15N50FHM15N50/HM15N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 15.0A, 500V, RDS(on) = 0.42 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast s witchingminimize o n-state r esistance, pr ovide superior switc

 9.1. Size:276K  philips
phm15nq20t.pdf

HM15N50F
HM15N50F

PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

 9.2. Size:779K  cn hmsemi
hm15n10d.pdf

HM15N50F
HM15N50F

HM15N10D N-Channel Enhancement Mode Power MOSFET Description The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =15A RDS(ON)

 9.3. Size:346K  cn hmsemi
hm15n120a.pdf

HM15N50F
HM15N50F

IGBT Features 1200V,15A VCE(sat)(typ.)=2.6V@VGE=15VIC=15A High speed switching Higher system efficiency Soft current turn-off waveforms General Description IGBTs offer lower losses and higher energy efficiency H&M for application such as IH (induction heating),UPS, General inverter and other soft switching applications. Absolute

 9.4. Size:553K  cn hmsemi
hm15n10k.pdf

HM15N50F
HM15N50F

HM15N10KN-Channel Enhancement Mode Power MOSFET Description The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

 9.5. Size:629K  cn hmsemi
hm15n02q.pdf

HM15N50F
HM15N50F

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =15A RDS(ON)

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