Справочник MOSFET. HM16N65F

 

HM16N65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM16N65F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 52 ns
   Cossⓘ - Выходная емкость: 218 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для HM16N65F

 

 

HM16N65F Datasheet (PDF)

 ..1. Size:1129K  cn hmsemi
 hm16n65f.pdf

HM16N65F HM16N65F

HM16N65FVDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 8.1. Size:827K  cn hmsemi
 hm16n60f.pdf

HM16N65F HM16N65F

VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.1. Size:989K  cn hmsemi
 hm16n02d.pdf

HM16N65F HM16N65F

HM16N02D20V N-Channel Enhancement Mode MOSFETDescription Schematic diagram The HM16N02D uses advanced trench technology to Dprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This Gdevice is suitable for use as a load switch or in PWM applications. General Features S VDS =20VID =16A Marking and pin assignment RDS(ON)(T

 9.2. Size:2457K  cn hmsemi
 hm16n50 hm16n50f.pdf

HM16N65F HM16N65F

HM16N50 / HM16N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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