HM18N50A - описание и поиск аналогов

HM18N50A / HM18N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 500V, RDS(on)typ. = 236m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 69nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

PHM18NQ15T TrenchMOS standard level FET Rev. 02 20 August 2004 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC converter primary sid

HM18N03D 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The uses advanced trench technol ogy D to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This G device is suitable for use as a load switch or in PWM applications. General Features S VDS =30V ID =18A Marking and pin assignment RDS(ON)(T

HM18N40 / HM18N40F / HM18N40A 400V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 18A, 400V, RDS(on) typ. = 0.20 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 50nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast