HM20N15A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM20N15A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 90 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 60 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 68 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO220
HM20N15A Datasheet (PDF)
hm20n15a.pdf
HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm20n15.pdf
HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
hm20n15ka.pdf
HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm20n15d.pdf
HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)
hm20n15k.pdf
HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
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