HM20N15A - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM20N15A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 68 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO220
Аналог (замена) для HM20N15A
HM20N15A Datasheet (PDF)
hm20n15a.pdf
HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm20n15.pdf
HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
hm20n15ka.pdf
HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
hm20n15d.pdf
HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)
Другие MOSFET... HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , IRF2807 , HM20N15D , HM20N15K , HM20N15KA , HM20N50A , HM20N50F , HM20N60 , HM20N60A , HM20N60F .
History: NVTA7002N | SWJ8N70D
Список транзисторов
Обновления
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