Справочник MOSFET. HM2300PR

 

HM2300PR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM2300PR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: SOT89

 Аналог (замена) для HM2300PR

 

 

HM2300PR Datasheet (PDF)

 ..1. Size:1067K  cn hmsemi
 hm2300pr.pdf

HM2300PR HM2300PR

HM2300PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

 8.1. Size:1890K  cn vbsemi
 hm2300.pdf

HM2300PR HM2300PR

HM2300www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

 8.2. Size:644K  cn hmsemi
 hm2300d.pdf

HM2300PR HM2300PR

HM2300DN-Channel Enhancement Mode Power MOSFET Description DThe HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 8.3. Size:567K  cn hmsemi
 hm2300b.pdf

HM2300PR HM2300PR

HM2300BN-Channel Enhancement Mode Power MOSFET Description DThe HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 8.4. Size:678K  cn hmsemi
 hm2300c.pdf

HM2300PR HM2300PR

HM2300CN-Channel Enhancement Mode Power MOSFET Description DThe HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 8.5. Size:977K  cn hmsemi
 hm2300dr.pdf

HM2300PR HM2300PR

HM2300DRN-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gbattery protection or in other switching application. SGeneral Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

 8.6. Size:553K  cn hmsemi
 hm2300.pdf

HM2300PR HM2300PR

HM2300N-Channel Enhancement Mode Power MOSFET Description DThe HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

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