HM2301B - аналоги, параметры транзистора - Справочник транзисторов

HM2301B даташит

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HM2301B P-Channel Enhancement Mode Power MOSFET Description D The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)

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HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

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HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

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HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D 0.45@ V =-4.5V GS G 1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GS S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage

Другие MOSFET... HM20PD05 , HM2300B , HM2300C , HM2300D , HM2300DR , HM2300PR , HM2301 , HM2301A , IRF830 , HM2301BJR , HM2301BKR , HM2301BSR , HM2301C , HM2301D , HM2301DR , HM2301E , HM2301F .