Справочник MOSFET. HM2301D

 

HM2301D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM2301D
   Маркировка: 2301D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.8 A
   Qgⓘ - Общий заряд затвора: 2.8 nC
   trⓘ - Время нарастания: 24.2 ns
   Cossⓘ - Выходная емкость: 18.5 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для HM2301D

 

 

HM2301D Datasheet (PDF)

 ..1. Size:704K  cn hmsemi
hm2301d.pdf

HM2301D
HM2301D

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistance

 0.1. Size:608K  cn hmsemi
hm2301dr.pdf

HM2301D
HM2301D

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistan

 8.1. Size:132K  chenmko
chm2301esgp.pdf

HM2301D
HM2301D

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili

 8.2. Size:1768K  cn vbsemi
hm2301kr.pdf

HM2301D
HM2301D

HM2301KRwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

 8.3. Size:572K  cn hmsemi
hm2301a.pdf

HM2301D
HM2301D

HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 8.4. Size:652K  cn hmsemi
hm2301c.pdf

HM2301D
HM2301D

HM2301 P-Channel Trench Power MOSFETGeneral DescriptionThe HM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2. AR

 8.5. Size:534K  cn hmsemi
hm2301.pdf

HM2301D
HM2301D

HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 8.6. Size:1133K  cn hmsemi
hm2301bkr.pdf

HM2301D
HM2301D

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

 8.7. Size:1387K  cn hmsemi
hm2301bsr.pdf

HM2301D
HM2301D

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

 8.8. Size:803K  cn hmsemi
hm2301b.pdf

HM2301D
HM2301D

HM2301BP-Channel Enhancement Mode Power MOSFET Description DThe HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)

 8.9. Size:727K  cn hmsemi
hm2301e.pdf

HM2301D
HM2301D

HM2301EP-Channel Trench Power MOSFETGeneral DescriptionThe HM2301E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2.0AR

 8.10. Size:273K  cn hmsemi
hm2301bjr.pdf

HM2301D
HM2301D

HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D0.45@ V =-4.5V GSG1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage

 8.11. Size:1451K  cn hmsemi
hm2301kr.pdf

HM2301D
HM2301D

HM2301KR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 8.12. Size:977K  cn hmsemi
hm2301f.pdf

HM2301D
HM2301D

HM2301FP-Channel Enhancement Mode Power MOSFET Description DThe HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.8A RDS(ON)

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