Справочник MOSFET. 2SK2523-01

 

2SK2523-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2523-01
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SK2523-01

 

 

2SK2523-01 Datasheet (PDF)

 ..1. Size:160K  1
 2sk2523-01.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2523-01FAP-II Series 450V 1 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivalen

 8.1. Size:162K  1
 2sk2520-01mr.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2520-01MRFAP-II Series 200V 0,4 10A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi

 8.2. Size:237K  1
 2sk2524-01mr.pdf

2SK2523-01 2SK2523-01

 8.3. Size:162K  1
 2sk2522-01mr.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2522-01MRFAP-II Series 200V 0,18 18A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

 8.4. Size:253K  1
 2sk2525-01.pdf

2SK2523-01 2SK2523-01

 8.5. Size:154K  1
 2sk2521-01.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2521-01FAP-II Series 200V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

 8.6. Size:89K  renesas
 2sk2529.pdf

2SK2523-01 2SK2523-01

2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drai

 8.7. Size:149K  fuji
 2sk2528-01.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2528-01FAP-II Series 900V 3,6 5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival

 8.8. Size:137K  fuji
 2sk2527-01mr.pdf

2SK2523-01 2SK2523-01

N-channel MOS-FET2SK2527-01MRFAP-II Series 900V 3,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

Другие MOSFET... 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , IRF840 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 , 2SK2553 , 2SK2554 , 2SK2586 , 2SK2684 .

 

 
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