Справочник MOSFET. HM2309B

 

HM2309B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM2309B
   Маркировка: 2309B
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Qgⓘ - Общий заряд затвора: 6.3 nC
   trⓘ - Время нарастания: 33.1 ns
   Cossⓘ - Выходная емкость: 41 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.188 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для HM2309B

 

 

HM2309B Datasheet (PDF)

 ..1. Size:1022K  cn hmsemi
 hm2309b.pdf

HM2309B HM2309B

HM2309B P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 8.1. Size:873K  cn hmsemi
 hm2309.pdf

HM2309B HM2309B

HM2309P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)215m@VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON)260m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex

 8.2. Size:413K  cn hmsemi
 hm2309d.pdf

HM2309B HM2309B

P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

 8.3. Size:593K  cn hmsemi
 hm2309apr.pdf

HM2309B HM2309B

HM2309APRP-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

 8.4. Size:541K  cn hmsemi
 hm2309c.pdf

HM2309B HM2309B

P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook

 8.5. Size:465K  cn hmsemi
 hm2309al.pdf

HM2309B HM2309B

HM2309ALH&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON)

 8.6. Size:1473K  cn hmsemi
 hm2309dr.pdf

HM2309B HM2309B

HM2309DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

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