Справочник MOSFET. HM2318APR

 

HM2318APR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HM2318APR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOT89
 

 Аналог (замена) для HM2318APR

   - подбор ⓘ MOSFET транзистора по параметрам

 

HM2318APR Datasheet (PDF)

 ..1. Size:1351K  cn hmsemi
hm2318apr.pdfpdf_icon

HM2318APR

HM2318 N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 7.1. Size:1187K  cn hmsemi
hm2318a.pdfpdf_icon

HM2318APR

HM2318A N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The HM2318A is the N-Channel logic enhancement mode power RDS(ON) 28m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 38m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min

 8.1. Size:402K  cn hmsemi
hm2318b.pdfpdf_icon

HM2318APR

HM2318BN Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer

 9.1. Size:413K  chenmko
chm2313qgp.pdfpdf_icon

HM2318APR

CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

Другие MOSFET... HM2309DR , HM2310B , HM2310C , HM2312 , HM2312B , HM2314 , HM2314B , HM2318A , IRFB4115 , HM2318B , HM2319 , HM2319A , HM2328 , HM2333 , HM2341 , HM2341B , HM2369 .

History: AOL1412 | QM7018AD | TK16A60W5 | VQ1000P | NP88N04DHE

 

 
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