HM24N20KA Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HM24N20KA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 163 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO252
Аналог (замена) для HM24N20KA
HM24N20KA Datasheet (PDF)
hm24n20ka.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
hm24n20k.pdf

HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
hm24n20.pdf

HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
hm24n50a.pdf

HM24N50A500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 25A, 500V, RDS(on)typ. = 167m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance
Другие MOSFET... HM2319A , HM2328 , HM2333 , HM2341 , HM2341B , HM2369 , HM24N20 , HM24N20K , IRF4905 , HM24N50A , HM25N03D , HM25N03Q , HM25N06D , HM25N06Q , HM25N08D , HM25N50 , HM25P03D .
History: DHS021N04B | APT6025BLLG | NTMFD5C470NLT1G | SWN6N65K | SIHF830 | BL8N60-A | SPD30N03S2L-10G
History: DHS021N04B | APT6025BLLG | NTMFD5C470NLT1G | SWN6N65K | SIHF830 | BL8N60-A | SPD30N03S2L-10G



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
mj15024 | 2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032