Справочник MOSFET. HM3207B

 

HM3207B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM3207B
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 310 W
   Предельно допустимое напряжение сток-исток |Uds|: 70 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 180 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 250 nC
   Время нарастания (tr): 190 ns
   Выходная емкость (Cd): 914 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM3207B

 

 

HM3207B Datasheet (PDF)

 ..1. Size:602K  cn hmsemi
hm3207b.pdf

HM3207B HM3207B

HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 0.1. Size:512K  cn hmsemi
hm3207bd.pdf

HM3207B HM3207B

HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 8.1. Size:379K  cn hmsemi
hm3207d.pdf

HM3207B HM3207B

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 8.2. Size:492K  cn hmsemi
hm3207.pdf

HM3207B HM3207B

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 8.3. Size:675K  cn hmsemi
hm3207t.pdf

HM3207B HM3207B

HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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