HM3400C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM3400C
Маркировка: A09T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.7 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 3.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.058 Ohm
Тип корпуса: SOT23
HM3400C Datasheet (PDF)
hm3400c.pdf
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N-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)
hm3400pr.pdf
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HM3400PRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
hm3400 sot23-3l.pdf
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HM3400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
hm3400dr.pdf
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HM3400DRN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON)
hm3400d.pdf
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HM3400DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.0A Schematic diagram RDS(ON)
hm3400b.pdf
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3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
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