HM3401PR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM3401PR
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.3 V
Максимально допустимый постоянный ток стока |Id|: 5.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.5 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT89
HM3401PR Datasheet (PDF)
hm3401pr.pdf
HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)
hm3401.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm3401d.pdf
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)
hm3401c.pdf
HM3401CP-Channel Enhancement Mode Power MOSFET Description DThe HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)
hm3401b.pdf
HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
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