HM3421B - описание и поиск аналогов

 ..1. Size:562K  cn hmsemi
 hm3421b.pdf 

HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 8.1. Size:643K  cn hmsemi
 hm3421.pdf 

HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 9.1. Size:568K  cn hmsemi
 hm3422.pdf 

HM3422 N-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM3422 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

 9.2. Size:488K  cn hmsemi
 hm3422a.pdf 

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

 9.3. Size:442K  cn hmsemi
 hm3426b.pdf 

N-Channel Enhancement Mode MOSFET HM3426B DESCRIPTION The HM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)