HM3422A - описание и поиск аналогов

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

HM3422 N-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM3422 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

N-Channel Enhancement Mode MOSFET HM3426B DESCRIPTION The HM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)

HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)