HM3426B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM3426B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 318 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: SOT89
HM3426B Datasheet (PDF)
hm3426b.pdf
N-Channel Enhancement Mode MOSFET HM3426BDESCRIPTIONTheHM3426Busesadvanced trench technology to provideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)
hm3422.pdf
HM3422N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM3422 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)
hm3421b.pdf
HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm3422a.pdf
HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co
hm3421.pdf
HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
