Справочник MOSFET. HM3N150F

 

HM3N150F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM3N150F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.3 nC
   trⓘ - Время нарастания: 16.7 ns
   Cossⓘ - Выходная емкость: 104 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для HM3N150F

 

 

HM3N150F Datasheet (PDF)

 ..1. Size:422K  cn hmsemi
 hm3n150f.pdf

HM3N150F HM3N150F

HM3N150AGeneral Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A DPD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

 7.1. Size:358K  cn hmsemi
 hm3n150a.pdf

HM3N150F HM3N150F

General Description VDSS 1500 V HM3N150A the silicon N-channel Enhanced ID 3 A PD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.1. Size:425K  cn hmsemi
 hm3n120f.pdf

HM3N150F HM3N150F

HM3N120FGeneral Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.2. Size:941K  cn hmsemi
 hm3n10mr.pdf

HM3N150F HM3N150F

HM3N10MRN-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 9.3. Size:610K  cn hmsemi
 hm3n120a.pdf

HM3N150F HM3N150F

HM3N120AGeneral Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi

 9.4. Size:645K  cn hmsemi
 hm3n10pr.pdf

HM3N150F HM3N150F

HM3N10PR N-Channel Enhancement Mode Power MOSFET Description DThe HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

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History: NCE55H12

 

 
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