N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatures

HM4030 N-Channel Trench Power MOSFET General Description The HM4030D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, loadDS(ON) switching especially for E-Bike controller applications.Features V =100V; I =118A@ V =10V; DS D GSTO-263-2L top view R

HM4033 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Powe

Spec. No. : HE9523HI-SINCERITYIssued Date : 1997.04.17Revised Date : 2005.06.30MICROELECTRONICS CORP.Page No. : 1/4HM4033PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM4033 is designed for high current general purpose amplifier applications.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......................................................