HM4402A - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM4402A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 232 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: SOP8
Аналог (замена) для HM4402A
HM4402A Datasheet (PDF)
hm4402a.pdf
H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)
hm4402c.pdf
HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
hm4402e.pdf
HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)
hm4402b.pdf
HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)
Другие MOSFET... SRC60R078BS2 , STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , 60N06 , HM4402B , HM4402C , HM4402E , HM4406A , HM4407 , HM4407A , HM4410A , HM4410B .
Список транзисторов
Обновления
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