HM4450A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM4450A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 41 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 460 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: SOP8
HM4450A Datasheet (PDF)
hm4450a.pdf
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HM4450AN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4450A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =8.0A RDS(ON)
chm4450jgp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHM4450JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
hm4454.pdf
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HM4454N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)
hm4453a.pdf
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HM4453AP-Channel Enhancement Mode Power MOSFET DDescription The HM4453A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -21A RDS(ON)
hm4453.pdf
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HM4453P-Channel Enhancement Mode Power MOSFET DDescription The HM4453 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)
hm4453b.pdf
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HM4453B P-Channel Enhancement Mode Power MOSFET Description DThe HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID = -9A RDS(ON)
hm4452.pdf
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HM4452N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)
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