Справочник MOSFET. HM4452

 

HM4452 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM4452
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 590 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для HM4452

 

 

HM4452 Datasheet (PDF)

 ..1. Size:564K  cn hmsemi
 hm4452.pdf

HM4452 HM4452

HM4452N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

 9.1. Size:77K  chenmko
 chm4450jgp.pdf

HM4452 HM4452

CHENMKO ENTERPRISE CO.,LTDCHM4450JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.2. Size:539K  cn hmsemi
 hm4454.pdf

HM4452 HM4452

HM4454N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)

 9.3. Size:659K  cn hmsemi
 hm4453a.pdf

HM4452 HM4452

HM4453AP-Channel Enhancement Mode Power MOSFET DDescription The HM4453A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -21A RDS(ON)

 9.4. Size:471K  cn hmsemi
 hm4453.pdf

HM4452 HM4452

HM4453P-Channel Enhancement Mode Power MOSFET DDescription The HM4453 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)

 9.5. Size:686K  cn hmsemi
 hm4453b.pdf

HM4452 HM4452

HM4453B P-Channel Enhancement Mode Power MOSFET Description DThe HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID = -9A RDS(ON)

 9.6. Size:771K  cn hmsemi
 hm4450a.pdf

HM4452 HM4452

HM4450AN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4450A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =8.0A RDS(ON)

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