HM4454 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM4454
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.6 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SOP8
HM4454 Datasheet (PDF)
hm4454.pdf
HM4454N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)
chm4450jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4450JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
hm4453a.pdf
HM4453AP-Channel Enhancement Mode Power MOSFET DDescription The HM4453A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -21A RDS(ON)
hm4453.pdf
HM4453P-Channel Enhancement Mode Power MOSFET DDescription The HM4453 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)
hm4453b.pdf
HM4453B P-Channel Enhancement Mode Power MOSFET Description DThe HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID = -9A RDS(ON)
hm4450a.pdf
HM4450AN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4450A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =8.0A RDS(ON)
hm4452.pdf
HM4452N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)
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