HM4486A - описание и поиск аналогов

HM4486A N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

HM4486E 100VDS 20VGS 3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

HM4485 Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

HM4487B P-Channel Enhancement Mode Power MOSFET Description D The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

HM4485A Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

HM4480 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

HM4487A P-Channel Enhancement Mode Power MOSFET Description D The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

HM4487 P-Channel Enhancement Mode Power MOSFET Description D The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

HM4482 100VDS 20VGS 2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=2.5A RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=115m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 SOP-8 - - - Rev. A.0

HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)