HM4828A - описание и поиск аналогов

HM4828A Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)

HM4828 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)

HM4822B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

HM4826 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =9A RDS(ON)

HM4822 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

HM4826A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =12.5A RDS(ON)

HM4821 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and D1 D2 design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 G2 General Features S1 S2 VDS =-60V,ID =-6.5A Schematic diagram RDS(ON)