HM50N15 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM50N15
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 220 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 163 nC
Время нарастания (tr): 24 ns
Выходная емкость (Cd): 670 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.023 Ohm
Тип корпуса: TO220
HM50N15 Datasheet (PDF)
hm50n15.pdf
HM50N15N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
hm50n15d.pdf
HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
hm50n10k.pdf
HM50N10K N-Channel Enhancement Mode Power MOSFET Description The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =50A RDS(ON)
chm50n06pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM50N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm50n06ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM50N06NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.
jfhm50n50c.pdf
JFHM50N50C Silicon N-Channel Power MOSFET VDSS(TC=150) 500 V ID 50 A Features PD(TC=25) 250 W Fast Switching RDS(ON) 0.082 ESD Improved Capability Low Gate Charge (Typical Data: 140nC) Low Reverse transfer capacitances(Typical: 80pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER Absolute
hm50n06ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
hm50n20.pdf
HM50N20N-Channel Enhancement Mode Power MOSFET Description The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
hm50n20d.pdf
HM50N20DN-Channel Enhancement Mode Power MOSFET Description The HM50N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
hm50n06i.pdf
HM50N06IN-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
hm50n06.pdf
HM50N06N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)
hm50n06d.pdf
HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)
hm50n08.pdf
HM50N08N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)
hm50n08k.pdf
H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)
hm50n06a.pdf
HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
hm50n03k.pdf
HM50N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =50A RDS(ON)
hm50n03i.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
hm50n03.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)
hm50n06k.pdf
HM50N06KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)
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