Справочник MOSFET. HM50N20D

 

HM50N20D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM50N20D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 603 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO263

 Аналог (замена) для HM50N20D

 

 

HM50N20D Datasheet (PDF)

 ..1. Size:558K  cn hmsemi
hm50n20d.pdf

HM50N20D
HM50N20D

HM50N20DN-Channel Enhancement Mode Power MOSFET Description The HM50N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)

 7.1. Size:780K  cn hmsemi
hm50n20.pdf

HM50N20D
HM50N20D

HM50N20N-Channel Enhancement Mode Power MOSFET Description The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)

 9.1. Size:97K  chenmko
chm50n06pagp.pdf

HM50N20D
HM50N20D

CHENMKO ENTERPRISE CO.,LTDCHM50N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.2. Size:68K  chenmko
chm50n06ngp.pdf

HM50N20D
HM50N20D

CHENMKO ENTERPRISE CO.,LTDCHM50N06NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 50 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 9.3. Size:940K  jiaensemi
jfhm50n50c.pdf

HM50N20D
HM50N20D

JFHM50N50C Silicon N-Channel Power MOSFET VDSS(TC=150) 500 V ID 50 A Features PD(TC=25) 250 W Fast Switching RDS(ON) 0.082 ESD Improved Capability Low Gate Charge (Typical Data: 140nC) Low Reverse transfer capacitances(Typical: 80pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER Absolute

 9.4. Size:716K  cn hmsemi
hm50n06ka.pdf

HM50N20D
HM50N20D

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.5. Size:529K  cn hmsemi
hm50n06i.pdf

HM50N20D
HM50N20D

HM50N06IN-Channel Enhancement Mode Power MOSFET Description The HM50N06I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.6. Size:588K  cn hmsemi
hm50n06.pdf

HM50N20D
HM50N20D

HM50N06N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

 9.7. Size:730K  cn hmsemi
hm50n06d.pdf

HM50N20D
HM50N20D

HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =50A RDS(ON)

 9.8. Size:714K  cn hmsemi
hm50n08.pdf

HM50N20D
HM50N20D

HM50N08N-Channel Enhancement Mode Power MOSFET Description The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)

 9.9. Size:531K  cn hmsemi
hm50n08k.pdf

HM50N20D
HM50N20D

H N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =50A RDS(ON)

 9.10. Size:575K  cn hmsemi
hm50n15d.pdf

HM50N20D
HM50N20D

HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

 9.11. Size:622K  cn hmsemi
hm50n10k.pdf

HM50N20D
HM50N20D

HM50N10K N-Channel Enhancement Mode Power MOSFET Description The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =50A RDS(ON)

 9.12. Size:927K  cn hmsemi
hm50n06a.pdf

HM50N20D
HM50N20D

HM50N06AN-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.13. Size:572K  cn hmsemi
hm50n03k.pdf

HM50N20D
HM50N20D

HM50N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =50A RDS(ON)

 9.14. Size:459K  cn hmsemi
hm50n03i.pdf

HM50N20D
HM50N20D

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 9.15. Size:502K  cn hmsemi
hm50n03.pdf

HM50N20D
HM50N20D

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 9.16. Size:577K  cn hmsemi
hm50n06k.pdf

HM50N20D
HM50N20D

HM50N06KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =50A RDS(ON)

 9.17. Size:525K  cn hmsemi
hm50n15.pdf

HM50N20D
HM50N20D

HM50N15N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

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