HM50P03 - описание и поиск аналогов

 

HM50P03. Аналоги и основные параметры

Наименование производителя: HM50P03

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: TO220

Аналог (замена) для HM50P03

- подборⓘ MOSFET транзистора по параметрам

 

HM50P03 даташит

 ..1. Size:1243K  cn hmsemi
 hm50p03.pdf pdf_icon

HM50P03

HM50P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON)

 0.1. Size:1039K  cn hmsemi
 hm50p03k.pdf pdf_icon

HM50P03

HM50P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON)

 0.2. Size:495K  cn hmsemi
 hm50p03d.pdf pdf_icon

HM50P03

HM50P03D P-Channel Enhancement Mode Power MOSFET Description The HM50P03D uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-30V,ID =-50A S RDS(ON)

 8.1. Size:1178K  cn hmsemi
 hm50p02k.pdf pdf_icon

HM50P03

HM50P02K P-Channel Enhancement Mode Power MOSFET D Description The HM50P02K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -50A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HM50N08, HM50N08K, HM50N10K, HM50N15, HM50N15D, HM50N20, HM50N20D, HM50P02K, SKD502T, HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530, HM55N03D, HM5853, HM5N06AR

 

 

 

 

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