Справочник MOSFET. HM50P03D

 

HM50P03D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM50P03D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 695 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: DFN5X6EP

 Аналог (замена) для HM50P03D

 

 

HM50P03D Datasheet (PDF)

 ..1. Size:495K  cn hmsemi
 hm50p03d.pdf

HM50P03D HM50P03D

HM50P03D P-Channel Enhancement Mode Power MOSFET Description The HM50P03D uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-30V,ID =-50A SRDS(ON)

 7.1. Size:1039K  cn hmsemi
 hm50p03k.pdf

HM50P03D HM50P03D

HM50P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM50P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -50A D SRDS(ON)

 7.2. Size:1243K  cn hmsemi
 hm50p03.pdf

HM50P03D HM50P03D

HM50P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM50P03 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -50A D SRDS(ON)

 8.1. Size:1178K  cn hmsemi
 hm50p02k.pdf

HM50P03D HM50P03D

HM50P02K P-Channel Enhancement Mode Power MOSFET DDescription The HM50P02K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -50A RDS(ON)

 8.2. Size:648K  cn hmsemi
 hm50p06k.pdf

HM50P03D HM50P03D

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 8.3. Size:569K  cn hmsemi
 hm50p06.pdf

HM50P03D HM50P03D

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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