HM50P06K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM50P06K
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 95 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 75 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 719 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: TO252
HM50P06K Datasheet (PDF)
hm50p06k.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)
hm50p06.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)
hm50p03k.pdf
HM50P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM50P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -50A D SRDS(ON)
hm50p03.pdf
HM50P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM50P03 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -50A D SRDS(ON)
hm50p02k.pdf
HM50P02K P-Channel Enhancement Mode Power MOSFET DDescription The HM50P02K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -50A RDS(ON)
hm50p03d.pdf
HM50P03D P-Channel Enhancement Mode Power MOSFET Description The HM50P03D uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-30V,ID =-50A SRDS(ON)
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